PART |
Description |
Maker |
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V 5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28 SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
HM62W4100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
HM6216255HCLTT-12 HM6216255HCTT-12 HM6216255HCJP-1 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
HM628511HCJP-12 HM628511HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
GS73024B-15I GS73024B GS73024B-10 GS73024B-10I GS7 |
3Mb28K x 24Bit)Asynchronous SRAM(3M位(128K x 24位)异步静态RAM) 128K X 24 3MB ASYNCHRONOUS SRAM 128KX 24 3MB的异步SRAM 128K X 24 3MB ASYNCHRONOUS SRAM 128K的X 24 3MB的异步SRAM
|
List of Unclassifed Manufacturers ETC[ETC] GSI Technology Electronic Theatre Controls, Inc.
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit)Asynchronous SRAM(8M位(256K x 32位)异步静态RAM) 8MB的(256 × 32位)异步SRAM00万位56K × 32位)异步静态RAM)的 256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM GSI Technology, Inc.
|
R1RP0408DGE-2PI R1RP0408DI |
Memory>Fast SRAM>Asynchronous SRAM Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit) Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT
|